Microstrip bend (1)
1. Example Description
In this example a 90 Degrees bend Microstrip structure is simulated, Fig. 1-2. The structure dimensions and material and conductor proprieties are identical to the Microstrip example Microstrip.
Fig. 1: The model of the bend Microstrip with the ground plane.
Fig. 2: The complete model of the bend Microstrip with the dielectric material.
2. TLM model
The bend Microstrip structure, excitation-type and
simulation setup are given in the TLM model files
I3D.dev.
The structure is excited with a Gaussian signal. In this case the time duration of the gaussian pulse is extremely short and the simulation bandwidth approximately 312GHz. The excitation is modelled by Templete (see documentation) which excites the field distribution of the fundamental mode.
Absorbing boundary conditions are used at the boundaries of the
simulation domain.
3. Simulation Results
3.1 Electromagnetic Fields Visualization
Similarly to the case of the Microstrip, we display, in Fig. 3-4, snapshots of field distribution. In this case due
to the fact that the excitation is extremely broadband also numerical dispersion maybe observed (see Section 3.2). The description of the numerical dispersion was already introduced in the example of Plane wave lossless.
Fig. 3: Snapshot of the of the electric filed distribution.
Fig.
4: Snapshot of the electric filed distribution from a top view.
3.2 Computed Time-Domain Signals
Also in this case as well as in the Mirostrip case, voltages signals are displayed at several different positions of the travelling Gaussian pulse.
Fig. 4: The time domain voltages signals.
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