Microstrip Transmission Line
1 Example Description
In the following example a simple Microstrip structure is simulated, Fig. 1. The green lines represent probes (current in this case, the voltage probes are not shown) by means of which the field can be "measured" inside the simulator.
The dimensions of the microstrip structure are w=439 and d=635 um where w is the width of the Microstrip metallization
and d is the thickness of the substrate. The substrate is a lossless non-magnetic dielectric material of relative permittivity is eps_r = 10.8.
The metallizations and the ground plane of the Microstrip are assumed to be perfect metallic conductors (PEC).
Fig. 1: The complete model of the microstrip with the substrate.
2. TLM model
The Microstrip structure, excitation-type and
simulation setup are given in the TLM model files
I3D.microstrip.
The structure is excited with a Gaussian signal. The excitation is modeled by Templete (see documentation) which excites the field distibution of the fundamental mode.
Absorbing boundary conditions are used at the boundaries of the
simulation domain.
3. Simulation Results
3.1 Electromagnetic Fields Visualization
As simulation results, in Fig. 3-4 we
display snapshots of field distribution.
Fig. 2: Vector visualization of the electric field in the vertical plane.
Fig. 5: Cross section view of the electric field distribution.
3.2 Computed Time-Domain Signals
In Fig. 4 the voltages time domain signals measured in several different positions (see green's lines in Fig. 1) of the microstrip are displayed.
Fig. 5: The time domain voltage signals.
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